坩堝下降法（vb）長(zhǎng)晶爐

所屬分類：

Ga2O3單晶生長(zhǎng)設(shè)備

概要：

本設(shè)備主要用于氧化鎵（Ga2O3）單晶生長(zhǎng)（無(wú)銥法），將原料放在垂直的坩堝內(nèi)，然后從坩堝尖端開(kāi)始通過(guò)預(yù)設(shè)好的溫度梯度區(qū)作定向凝固。通過(guò)緩慢降溫而生長(zhǎng)出單晶。

關(guān)鍵詞：

坩堝下降法（vb）長(zhǎng)晶爐

坩堝下降法（vb）長(zhǎng)晶爐

產(chǎn)品概述/Product Introduction：

This equipment is mainly used for single crystal growth of Gallium Oxide (Ga2O3) (non-iridium method), where the raw material is placed in a vertical crucible and then directionally solidified from the tip of the crucible through a pre-set temperature gradient zone. Single crystals are grown by slow cooling.

產(chǎn)品特點(diǎn)/Product Characteristics：

♦產(chǎn)量:2-6英寸 Capacity:2-6 inches

♦最高溫度:1850℃ Maximum temperature: 1850°C

♦加熱方式:電阻/RF Heating method: Resistance heating/RF heating

♦自動(dòng)化:全自動(dòng)化（除裝取料外） Automation:Full automation (except loading and unloading)

♦氣路:3路 Air Circuit:3 ways

♦襯底:2英寸 Substrate:2 inches

♦單晶:2英寸高度:30mm Single crystal:2 inches Height:30mm

♦純單晶，沒(méi)有雜質(zhì)，電學(xué)性能不做保證 Pure single crystal, no impurities, electrical properties are not guaranteed

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